MOSFET degradation due to hot-carrier effect at high frequencies
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (1) , 21-23
- https://doi.org/10.1109/55.46918
Abstract
Hot-carrier-induced degradation due to AC stress on short-channel MOSFETs is discussed. It is observed that pulsed gate voltage stressing with a short falltime (0.7 ns) can cause additional lifetime degradation in the form of drain-current reduction. The AC-enhanced degradation is more pronounced at higher frequencies.Keywords
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