Dynamic stress experiments for understanding hot-carrier degradation phenomena

This publication has 15 references indexed in Scilit:

• The relationship between Oxide charge and device degradation: A comparative study of n- and p- channel MOSFET's
  IEEE Transactions on Electron Devices, 1987
• Dynamic channel hot-carrier degradation of NMOS transistors by enhanced electron-hole injection into the oxide
  IEEE Electron Device Letters, 1987
• Hot-carrier-injected oxide region and hot-electron trapping as the main cause in Si nMOSFET degradation
  IEEE Transactions on Electron Devices, 1987
• Chemical and electronic structure of the SiO2/Si interface
  Materials Science Reports, 1986
• Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing
  IEEE Transactions on Nuclear Science, 1986
• Hot-electron and hole-emission effects in short n-channel MOSFET's
  IEEE Transactions on Electron Devices, 1985
• Physical Mechanisms Contributing to Device "Rebound"
  IEEE Transactions on Nuclear Science, 1984
• Two-carrier nature of interface-state generation in hole trapping and radiation damage
  Applied Physics Letters, 1981
• Threshold-voltage instability in MOSFET's due to channel hot-hole emission
  IEEE Transactions on Electron Devices, 1981
• THE PROPERTIES OF ELECTRON AND HOLE TRAPS IN THERMAL SILICON DIOXIDE LAYERS GROWN ON SILICON
  Published by Elsevier ,1978