Analysis of mechanisms for the enhanced degradation during AC hot carrier stress of MOSFETs

This publication has 7 references indexed in Scilit:

• ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE
  Le Journal de Physique Colloques, 1988
• Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs
  IEEE Transactions on Electron Devices, 1988
• Hot-carrier-induced MOSFET degradation under AC stress
  IEEE Electron Device Letters, 1987
• Quasi-static simulation of hot-electron-induced MOSFET degradation under AC (pulse) stress
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1987
• Evaluation of hot carrier degradation of N-channel MOSFET's with the charge pumping technique
  IEEE Electron Device Letters, 1986
• Hot-electron-induced MOSFET degradation—Model, monitor, and improvement
  IEEE Transactions on Electron Devices, 1985
• A reliable approach to charge-pumping measurements in MOS transistors
  IEEE Transactions on Electron Devices, 1984