A simple explanation for the apparent relaxation effect associated with hot-carrier phenomenon in MOSFETs
- 1 December 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (12) , 627-629
- https://doi.org/10.1109/55.20417
Abstract
The shift in the drain current of a nearby unstressed MOSFET device was used to study the apparent relaxation effect on the drain current of a stressed device observed after the hot-carrier stress is stopped. A simple correction scheme is shown to be adequate for removing this effect. It was found that the effect may not be due to any decrease in the actual degradation. Instead, findings strongly support the idea that the major cause is a shift in the temperature due to heat dissipation caused by self-heating during the stress.Keywords
This publication has 6 references indexed in Scilit:
- Relaxation effects in NMOS transistors after hot-carrier stressingIEEE Electron Device Letters, 1987
- A simple method to evaluate device lifetime due to hot-carrier effect under dynamic stressIEEE Electron Device Letters, 1986
- Lifetimes and substrate currents in static and dynamic hot-carrier degradationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Hot-electron-induced MOSFET degradation at low temperaturesIEEE Electron Device Letters, 1985
- Hot-electron-induced MOSFET degradation—Model, monitor, and improvementIEEE Transactions on Electron Devices, 1985
- Mechanism of hot electron induced degradation in LDD NMOS-FETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984