1/f noise in MOSFETs with ultrathin gate dielectrics
- 1 January 1992
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 881-884
- https://doi.org/10.1109/iedm.1992.307497
Abstract
A model of 1/f noise which accounts for the full temperature and bias dependence of the noise power spectral density (PSD) of both N- and P-channel MOSFETs in the linear region is presented. This model is significantly different from past work in that the 1/f spectral dependence of the noise is shown to arise from traps uniformly distributed in activation energy, rather than from traps uniformly distributed in depth into the oxide. The model applies results of characterization of single-electron traps to demonstrate i) the importance of the temperature-activated capture and emission rates of near-interface oxide traps and ii) the importance of induced mobility fluctuations, on the 1/f noise present in the channel of the MOS device.Keywords
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