Effects of Hg Annealing on Photoluminescence Spectra of CdTe Crystals and MOCVD-Grown CdTe/GaAs Films
- 1 July 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (7A) , L1246
- https://doi.org/10.1143/jjap.28.l1246
Abstract
Annealing effects on CdTe crystals and CdTe/GaAs films in Hg have been investigated through the spectral changes of PL (photoluminescence) at 4.2 K. Before annealing, the PL spectrum of CdTe crystals or films is dominated by the excitonic-emission lines, the edge-emission band and two broad bands. After annealing, a marked decrease in intensity of the broad and edge-emission bands in the bulk crystals is observed, while an increase in intensity of the broad bands in the MOCVD-grown CdTe is significant. We will point out from the PL investigations that the Hg annealing plays an important role in the improvement of both the surface and bulk properties.Keywords
This publication has 8 references indexed in Scilit:
- Characterization of a GaAs/HgCdTe interface formed by MOCVDJournal of Crystal Growth, 1988
- Fabrication and photoluminescence properties of ZnTe and CdZnTe films by low pressure metalorganic chemical-vapour depositionJournal of Crystal Growth, 1988
- Donors and acceptors in tellurium compounds; The problem of doping and self-compensationJournal of Crystal Growth, 1985
- The growth of high quality CdxHg1−xTe by MOVPE onto GaAs substratesJournal of Crystal Growth, 1985
- Photoluminescence in CdTe grown on GaAs by metalorganic chemical vapor depositionApplied Physics Letters, 1985
- Novel type of optical transition observed in MBE grown CdTeJournal of Physics D: Applied Physics, 1984
- Observation of Hg diffusion in CdTe by means of 40-MeV O5+ ion backscatteringApplied Physics Letters, 1984
- Molecular beam epitaxial growth of high structural perfection, heteroepitaxial CdTe films on InSb (001)Applied Physics Letters, 1981