The determination of deep level concentrations in high resistivity semiconductors by DLTS, with special reference to germanium

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Abstract
When studying trapping centres in ultra-high-purity, quasi-intrinsic semiconductors by deep level transient spectroscopy (DLTS), considerable errors may be introduced in applying the original small theory. In the present work expressions are presented, which allow a more accurate determination of deep level concentrations with DLTS in the case of: (i) high relative trap concentrations rT (0TT in high resistivity material. It is furthermore shown that under certain conditions, a C-V analysis of HP-Ge diodes leads to the correct value of the net ionised impurity density. This way of obtaining the residual shallow level density, as compared to Hall measurements, is discussed.