Band gap shrinkage in GaInAs/GaInAsP/InP multi-quantum well lasers
- 1 July 1992
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (1) , 279-281
- https://doi.org/10.1063/1.352129
Abstract
We investigated a band gap shrinkage in both lattice‐matched and compressive strained GaInAs/GaInAsP/InP multi‐quantum well lasers. The band gap shrinkage is obtained from the broadening of the low energy side in the spectrum by considering effects of an intraband scattering and a fundamental band edge. It amounts to 20–25 meV at sheet carrier densities of above 1012 cm−2, and shows n1/1.3 dependence at low carrier densities and n1/3 dependence at higher densities. These dependencies agree well with theoretical predictions in the quantum well.This publication has 11 references indexed in Scilit:
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