Growth and properties of Hg1−xCdxTe on GaAs substrates by organometallic vapor-phase epitaxy
- 15 March 1986
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (6) , 2253-2255
- https://doi.org/10.1063/1.336371
Abstract
Growth of epitaxial mercury cadmium telluride (Hg1−xCdxTe) on (100) GaAs substrates by organometallic vapor‐phase epitaxy is described. Transport measurements made on these layers at 80 K indicate an electron mobility greater than 2×105 cm2/ V s for layers of composition x≂0.2. An intervening CdTe buffer layer was used to accommodate the large (14%) lattice mismatch between these systems, and HgCdTe layers have been grown with CdTe buffer layer thicknesses from 1000 Å to 3 μm. It is shown that a CdTe buffer layer of 2–3 μm is necessary to accommodate the misfit dislocations at the CdTe‐GaAs interface.This publication has 8 references indexed in Scilit:
- Growth of CdTe on GaAs by organometallic vapor phase heteroepitaxyApplied Physics Letters, 1985
- Molecular beam epitaxy of alloys and superlattices involving mercuryJournal of Vacuum Science & Technology A, 1985
- MOCVD growth of CdTe and HgCdTeJournal of Vacuum Science & Technology A, 1985
- Molecular beam epitaxial growth of high quality HgTe and Hg1−xCdxTe onto GaAs(001) substratesApplied Physics Letters, 1984
- Metalorganic vapor deposition of CdTe and HgCdTe epitaxial films on InSb and GaAs substratesApplied Physics Letters, 1984
- High quality Hg1−xCdxTe epitaxial layers by the organometallic processApplied Physics Letters, 1984
- Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxyApplied Physics Letters, 1984
- Comparative studies of mercury cadmium telluride single crystal and epitaxialJournal of Vacuum Science & Technology A, 1983