Subgap absorption spectra of ion-implanted Si and GaAs layers
- 25 December 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (26) , 2745-2747
- https://doi.org/10.1063/1.101941
Abstract
The subgap absorption spectra of ion-implanted Si and GaAs layers are reported and the influence of increasing ion implantation dose is shown. The absorption spectra are shown to depend strongly on the implantation dose in the whole investigated spectrum before the layer amorphization dose is reached. Smaller changes are induced and only in a limited spectral region with further dose increases.Keywords
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