High capability, quasi-closed growth system for isothermal vapour phase epitaxy of (Hg, Cd)Te
- 1 July 1988
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 161, 157-169
- https://doi.org/10.1016/0040-6090(88)90247-7
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Open-tube vapor transport epitaxy of Hg1−xCdxTeJournal of Electronic Materials, 1984
- Open-tube isothermal vapor phase epitaxy of Hg1−xCdxTe on CdTeApplied Physics Letters, 1984
- Isothermal Growth of HgCdTe under Controlled Hg Vapor PressureJournal of the Electrochemical Society, 1982
- Heteroepitaxial homogeneous CdxHg1−xTe filmsThin Solid Films, 1978