High-performance photovoltaic infrared devices in Hg1−xCdxTe on GaAs
- 1 May 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (9) , 851-853
- https://doi.org/10.1063/1.95861
Abstract
A combination of organometallic and isothermal vapor phase epitaxy was used sequentially to grow CdTe and Hg1−xCdxTe on GaAs substrates. Photodiodes in the Hg1−xCdxTe show properties comparable to the best Hg1−xCdxTe grown by liquid phase epitaxy. Resistance‐area products were ≥107 Ω cm2 and >104 Ω cm2 at 77 K for Hg1−xCdxTe with cut‐off wavelength of 3.73 and 5.54 μm at 77 K, respectively. The backside‐illuminated spectral response was broadband with peak external quantum efficiencies typically >50% (without antireflection coating).Keywords
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