Growth of CdTe films on silicon by molecular beam epitaxy
- 1 July 1983
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (7) , 4238-4240
- https://doi.org/10.1063/1.332529
Abstract
Results of initial attempts to grow cubic-phase CdTe films on (111) and (100) Si substrates by molecular beam epitaxy are reported. Substrate temperatures in the range 200–400 °C were employed along with deposition rates of 1–9 Å/s. Films grown at temperatures below 300 °C exhibited streaked x-ray diffraction patterns which contained extra hexagonal-phase features. Sharp cubic-phase epitaxy was obtained for CdTe films grown on (111) Si substrates at 330–350 °C. Similar depositions on (100) Si substrates also produced epitaxial CdTe films. However, the (100) epilayers displayed unusual x-ray diffraction patterns which are suggestive of twin formation. Nomarski micrographs revealed the epitaxial CdTe films to be uniformly free of voids and microcracks despite the large difference in lattice constant and thermal expansion coefficient for these materials.This publication has 7 references indexed in Scilit:
- Growth of CdTe films on sapphire by molecular beam epitaxyApplied Physics Letters, 1983
- Abel inversion with a simple analytic representation for experimental dataApplied Physics Letters, 1983
- Properties of CdTe/InSb heterostructures prepared by molecular beam epitaxyJournal of Applied Physics, 1982
- CdxHg1−xTe n-type layers grown by molecular beam epitaxyApplied Physics Letters, 1982
- Growth of HgCdTe films by laser induced evaporation and depositionJournal of Vacuum Science and Technology, 1982
- Optical properties of polycrystalline CdTe filmsJournal of Applied Physics, 1981
- Epitaxial growth and structure of films of CdTe evaporated in vacuum on to siliconPhysica Status Solidi (a), 1974