Growth of CdTe films on sapphire by molecular beam epitaxy

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Abstract
Results of initial attempts to grow cubic‐phase CdTe films on sapphire by molecular beam epitaxy are reported. Depositions have been completed on (11̄02) R‐plane, (12̄10) A‐plane, and (0001) basal plane substrates. Substrate temperatures in the range 260–350 °C were employed along with deposition rates of 1.5–7.5 Å/s. Depositions on (11̄02) sapphire generally produced films containing some elements of the hexagonal phase, as disclosed by x‐ray diffraction and UV reflectance measurements. Sharp cubic‐phase epitaxy was obtained for thick (∼5 μm) CdTe films grown on (12̄10) and (0001) sapphire substrates. The epitaxial films are smooth and mirrorlike in appearance. Nomarski micrographs show a featureless CdTe surface.