Control of multipolar electron cyclotron resonance discharges using internal cavity impedance matchinga)
- 1 May 1994
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 65 (5) , 1753-1756
- https://doi.org/10.1063/1.1144872
Abstract
Recently, electron cyclotron resonance (ECR) discharges have been successfully applied to numerous ion source applications. These range from accelerator to etching and thin film deposition applications, and have strong potential for application in several commercial/industrial processes. Thus, new design requirements related to process automation and control are now imposed on plasma source design. Internal cavity tuning methods for excitation and impedance matching and ECR discharge control are presented. These impedance matching methods utilize a variable cavity end plate and an adjustable coupling probe to provide the two independent adjustments required to match the discharge loaded cavity applicator. Both end feed and side feed coupling create a well matched plasma source but the end feed excitation produces the most efficient (∼220–230 eV/ion) and most uniform (1σ=2.5%) discharge. Control of internal tuning can serve not only to match discharge impedance, but with the proper control can also avoid hysteresis and multiple steady states and jumps in plasma source outputs. Adjusting the internal cavity tuning to always produce a slight mismatch helps insure a stable and repeatable discharge operation.Keywords
This publication has 12 references indexed in Scilit:
- Experimental scaling laws for multipolar electron cyclotron resonance plasma sourcesJournal of Vacuum Science & Technology A, 1993
- Selective and uniform high rate etching of polysilicon in a magnetically confined microwave dischargeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Microwave plasma enhanced chemical vapor deposition in magnetic fields below electron cyclotron resonanceJournal of Vacuum Science & Technology A, 1992
- Investigation of the influence of electromagnetic excitation on electron cyclotron resonance discharge propertiesJournal of Vacuum Science & Technology A, 1992
- Ion sources for dry etching: Aspects of reactive ion beam etching for Si technology (invited)a)Review of Scientific Instruments, 1992
- Characterization and stabilization of an electron-cyclotron resonance plasma source using an automatic microwave tunerReview of Scientific Instruments, 1992
- Plasma parameter and etch measurements in a multipolar confined electron cyclotron resonance dischargeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- A compact, resonant cavity, five centimeter, multicusp, ECR broad-beam ion sourceReview of Scientific Instruments, 1990
- A 915 MHz/2.45 GHz ECR plasma source for large area ion beam and plasma processingReview of Scientific Instruments, 1990
- Electron cyclotron resonance microwave discharges for etching and thin-film depositionJournal of Vacuum Science & Technology A, 1989