Hot Electron Effects in n-type Germanium at 9-392 G c/s†
- 1 May 1964
- journal article
- electronics section
- Published by Taylor & Francis in Journal of Electronics and Control
- Vol. 16 (5) , 481-491
- https://doi.org/10.1080/00207216408937660
Abstract
Measurements have been made of the changes in the complex permittivity of 10 ohm-cm n-type germanium subjected to d.e. electric fields up to 3 kv/cm. The measuring frequency was 9.392G c/s and the amplitude of the applied electric field was very much greater than the microwave field. For the condition of parallel microwave and d.c. electric fields the results show that the conductivity is controlled by the differential mobility (dv/de) and that the free carrier contribution to the dielectric constant is positive for applied fields above 500 v/cm.Keywords
This publication has 9 references indexed in Scilit:
- High-Field Conductivity in Germanium and Silicon at Microwave FrequenciesJournal of Applied Physics, 1961
- A study of energy-loss processes in germanium at high electric fields using microwave techniquesJournal of Physics and Chemistry of Solids, 1961
- The field-dependence of carrier mobility in silicon and germaniumJournal of Physics and Chemistry of Solids, 1960
- The mobility of electrons heated by microwave fields in n-type germaniumJournal of Physics and Chemistry of Solids, 1959
- XIV. The Effect of High Electric Fields on the Absorption of Germanium at Microwave FrequenciesJournal of Electronics and Control, 1956
- VI. The Field-Dependence of Electron Mobility in GermaniumJournal of Electronics and Control, 1956
- The Absorption of 39 kMc/s (39 Gc/s) Radiation in GermaniumProceedings of the Physical Society. Section B, 1956
- Hot Electrons in Germanium and Ohm's LawBell System Technical Journal, 1951
- Mobilities of Electrons in High Electric FieldsPhysical Review B, 1951