Proton-implanted optical waveguide detectors in GaAs
- 15 December 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (12) , 664-665
- https://doi.org/10.1063/1.1654783
Abstract
Defect levels introduced by implanting GaAs with high‐energy protons give rise to optical absorption at wavelengths greater than that of the normal absorption edge at 0.9 μ. Optical waveguide detectors may be fabricated by taking advantage of this absorption mechanism in the presence of a Schottky barrier depletion layer. Detector response times less than 200 ns and external quantum efficiencies of 16% have been observed.Keywords
This publication has 1 reference indexed in Scilit:
- OBSERVATION OF PROPAGATION CUTOFF AND ITS CONTROL IN THIN OPTICAL WAVEGUIDESApplied Physics Letters, 1970