Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopy
- 1 January 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (1) , 31-33
- https://doi.org/10.1016/0038-1101(80)90164-1
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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- Effective masses in (100) silicon inversion layersSolid State Communications, 1977
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- Effect of static uniaxial stress on the Raman spectrum of siliconSolid State Communications, 1970
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Deformation of and Stress in Epitaxial Silicon Films on Single-Crystal SapphireJournal of Applied Physics, 1965