Surface quantum oscillations in n-type (100) silicon inversion layers on sapphire
- 31 December 1977
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 24 (10) , 703-706
- https://doi.org/10.1016/0038-1098(77)90079-5
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- Electronic ground state of inversion layers in many-valley semiconductorsPhysical Review B, 1977
- Mobility Hump and Inversion Layer Subbands in Si on SapphireJournal of the Physics Society Japan, 1976
- Surface quantum oscillations in (110) and (111) n-type silicon inversion layersSolid State Communications, 1975
- Elastoresistance of n-type silicon on sapphireJournal of Applied Physics, 1974
- Anisotropy in electrical properties of {001} Si/{011̄2} Al2O3Journal of Applied Physics, 1973
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Deformation of and Stress in Epitaxial Silicon Films on Single-Crystal SapphireJournal of Applied Physics, 1965