Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions
- 1 January 2002
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Preparation of novel SiGe-free strained Si on insulator substratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substratesIEEE Electron Device Letters, 2001
- SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistorsApplied Physics Letters, 2001
- Factors limiting the composition window for fabrication of SiGe-on-insulator substrate by low-energy oxygen implantationThin Solid Films, 2000