Preparation of novel SiGe-free strained Si on insulator substrates
- 1 January 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 211-212
- https://doi.org/10.1109/soi.2002.1044480
Abstract
A novel SiGe-free SSOI substrate technology has been described. This method enables the fabrication of well controlled, epitaxially-defined, thin strained Si layers directly on insulator layers. Tensile strain levels of greater than 1% have been demonstrated in these structures, and are not diminished after thermal anneal cycles. The strain-inducing relaxed SiGe layer is absent from the final structure, eliminating some of the key problems inherent to other SSOI solutions.Keywords
This publication has 5 references indexed in Scilit:
- Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substratesIEEE Electron Device Letters, 2001
- SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistorsApplied Physics Letters, 2001
- Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technologyIEEE Electron Device Letters, 2000
- Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishingApplied Physics Letters, 1998
- Measurements of alloy composition and strain in thin GexSi1−x layersJournal of Applied Physics, 1994