Deep donor state of vanadium in cubic silicon carbide (3C-SiC)
- 3 October 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (14) , 1811-1813
- https://doi.org/10.1063/1.112851
Abstract
Electron spin resonance (ESR) of silicon‐substitutional vanadium in its neutral V4+Si (3d1) state has been observed in cubic bulk 3C‐SiC single crystals. By photo‐ESR the position of the (0/+) deep donor level of vanadium could be located at EV+1.7 eV. Using this level as common reference in 3C‐SiC and 6H‐SiC, the valence‐band discontinuity in the 3C‐SiC/6H‐SiC interface is predicted as ΔEV=0.1 eV, with the valence band of 3C‐SiC lying lower in energy. We also offer an explanation for the absence of intra‐3d‐shell infrared luminescence of V4+ (3d1) in 3C‐SiC.Keywords
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