Near-equilibrium growth of thick, high quality beta-SiC by sublimation
- 19 April 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (16) , 1919-1921
- https://doi.org/10.1063/1.109544
Abstract
A close spaced near‐equilibrium growth technique was used to produce thick, high quality epitaxial layers of beta‐silicon carbide. The process utilized a sublimation method to grow morphologically smooth layers. The beta silicon carbide growth layers varied from about 200 to 750 μm in thickness. Chemical vapor deposition grown, 2–10 μm, beta silicon carbide films were used as seeds at 1860 and 1910 °C growth temperatures. The respective average growth rates were 20 and 30 μm per hour. The layers are p‐type with a 3.1×1017 cm−3 carrier concentration. Electrical measurements indicate considerable improvement in the breakdown voltage of Schottky barriers on growth samples. Breakdown values ranged from 25 to 60 V. These measurements represent the highest values reported for 3C‐SiC.Keywords
This publication has 8 references indexed in Scilit:
- Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbideProceedings of the IEEE, 1991
- Low-pressure growth of single-crystal silicon carbideMaterials Letters, 1986
- General principles of growing large-size single crystals of various silicon carbide polytypesJournal of Crystal Growth, 1981
- Investigations of kinetic and thermal conditions of silicon carbide epitaxial layer growth from the vapour phaseJournal of Crystal Growth, 1979
- Epitaxial growth of silicon carbide layers by sublimation „sandwich method”︁ (I) growth kinetics in vacuumCrystal Research and Technology, 1979
- Investigation of growth processes of ingots of silicon carbide single crystalsJournal of Crystal Growth, 1978
- Studies of growth kinetics and polytypism of silicon carbide epitaxial layers grown from the vapour phaseJournal of Crystal Growth, 1976
- Thermodynamic Study of SiC Utilizing a Mass SpectrometerThe Journal of Chemical Physics, 1958