Analysis of Si Schottky Barrier Characteristics Based on a New Interfacial Layer Model
- 1 January 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (1R)
- https://doi.org/10.1143/jjap.30.19
Abstract
Current-voltage characteristics of Si Schottky barrier diodes are measured at various temperatures between 300 K and 420 K in order to investigate an applicability of a newly proposed interfacial layer model for Schottky barrier. Experimental data are analyzed on a basis of this model. Analyzed results are mostly found to be similar to those of a-Si:H and can be interpreted by the present model. The new interfacial layer model is then concluded to well represent actual Schottky barriers for both amorphous and crystalline semiconductors.Keywords
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