Write-Erase Characteristics of Phase Change Optical Recording in Ga–Se–Te Systems

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Abstract
Reversible optical changes in a thin-film system of parylene/Te z (Ga x Se1-x )1-z film (0.6≤z≤0.9, 0≤x≤0.3)/parylene structure has been studied by measuring the time required to crystalline from the amorphous state (the erasing time) and the number of reversible reflectance changes occurring between amorphous (written) and crystalline (erased) states. For a specimen with a Ga composition of x=0.15, the erasing time is about 1 µs. From a discussion of the Ga–Se–Te phase diagram, it becomes clear that the optimum composition showing write-erase characteristics is obtained at an eutectic point, in which the segregation is not caused and many cycle operations are possible. The SIC (Surface Induced Crystallization) model seems to be suitable for explaining the erasing process in the chalcogenide thin films.