Liquid-phase epitaxial growth of gallium arsenide under transient thermal conditions
- 1 July 1970
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 7 (1) , 69-73
- https://doi.org/10.1016/0022-0248(70)90117-x
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- On the growth rate of crystals from solutionJournal of Crystal Growth, 1968
- Theoretical analysis of requirements for crystal growth from solutionJournal of Crystal Growth, 1968
- EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1-xAlxAs p-n JUNCTIONS GROWN BY LIQUID-PHASE EPITAXYApplied Physics Letters, 1967
- Preparation and Properties of Solution-Grown Epitaxial p—n Junctions in GaPJournal of Applied Physics, 1966
- Photoluminescence and solution growth of gallium arsenideSolid-State Electronics, 1966
- LONGITUDINAL INJECTION-PLASMA LASER OF InSbApplied Physics Letters, 1965