Pressure-inducedΓ-Xtransition in (Ga,In)P
- 15 December 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (18) , 13206-13209
- https://doi.org/10.1103/physrevb.38.13206
Abstract
Transport properties of (Ga,In)P are reported to 6 GPa pressure. Room-temperature Hall and resistivity measurements show a transition in mobility from Γ- to X-band conduction and a corresponding maximum in the Hall constant at 2.8 GPa. Room-temperature photoluminescence was measured to determine the increase in the Γ-band gap with pressure at a rate of 0.096±0.005 eV/GPa. A two-band model was used to explain the transport measurements.Keywords
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