The temperature and pressure dependence of the electron and hole mobilities in GaxIn1-xAsyP1-y alloys
- 1 January 1982
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 11 (1) , 155-189
- https://doi.org/10.1007/bf02654614
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Pressure dependence of hole mobility in In
1−
x
Ga
x
As
y
P
1−
y
and its relation to alloy scatteringElectronics Letters, 1981
- Alloy scattering effects and calculated mobility in n -type Ga 0.47 In 0.53 AsElectronics Letters, 1981
- LPE and VPE In1-xGaxAsyP1-y/InP: Transport properties, defects, and device considerationsIEEE Journal of Quantum Electronics, 1981
- Evidence for alloy scattering from pressure-induced changes of electron mobility in In
1−
x
Ga
x
As
y
P
1−
y
Electronics Letters, 1980
- Mobility of holes in the quaternary alloy In
1−
x
Ga
x
As
y
P
1−
y
Electronics Letters, 1980
- Pressure coefficient of the direct band gap offrom optical absorption measurementsPhysical Review B, 1979
- Alloy scattering and high field transport in ternary and quaternary III–V semiconductorsSolid-State Electronics, 1978
- Properties of Liquid Phase Epitaxial In1 − x Ga x As ( x ≅ 0.5 ) on InP SubstrateJournal of the Electrochemical Society, 1978
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971
- Calculation of Energy-Band Pressure Coefficients from the Dielectric Theory of the Chemical BondPhysical Review Letters, 1971