Electron-beam-assisted dry etching for GaAs using electron cyclotron resonance plasma electron source
- 21 December 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (25) , 3011-3013
- https://doi.org/10.1063/1.107994
Abstract
No abstract availableKeywords
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- Si and GaAs dry etching utilizing showered electron-beam assisted etching through Cl2 gasApplied Physics Letters, 1991
- Characterization of subsurface damage in GaAs processed by Ga+ focused ion-beam-assisted Cl2 etching using photoluminescenceJournal of Applied Physics, 1989
- Surface Damage on GaAs Induced by Reactive Ion Etching and Sputter EtchingJournal of the Electrochemical Society, 1986