Si and GaAs dry etching utilizing showered electron-beam assisted etching through Cl2 gas
- 28 October 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (18) , 2284-2286
- https://doi.org/10.1063/1.106044
Abstract
Electron‐beam (EB) dry etching for Si and GaAs has been studied by utilizing showered electron‐beam assisted etching in the presence of Cl2 gas. Anisotropic etching has been demonstrated for both Si and GaAs EB dry etching. Si and GaAs patterns with 0.6 and 0.3 μm linewidths have been obtained at a dose of 2×10−2 C/cm2 and 1×10−3 C/cm2. It was confirmed, through measuring photoluminescence, that damage induced by EB dry etching is nearly the same as that caused by gas etching and less than damage induced by reactive ion‐beam etching and ion‐beam etching.Keywords
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