Nanostructure Fabrication by Scanning Tunneling Microscope
- 1 December 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (12R) , 2854-2857
- https://doi.org/10.1143/jjap.29.2854
Abstract
Direct writing deposition patterns of W metal and carbon, and etching patterns of Si are achieved by electron-beam-induced selective etching and deposition using a scanning tunneling microscope (STM-EBISED). These patterns have been obtained down to 50 nm in size with pulse modulating voltage. Furthermore, writing voltage dependencies of deposition and etching are discussed.Keywords
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- Direct writing of 10 nm features with the scanning tunneling microscopeApplied Physics Letters, 1988
- Direct deposition of 10-nm metallic features with the scanning tunneling microscopeJournal of Vacuum Science & Technology B, 1988