Direct writing onto Si by electron beam stimulated etching
- 9 November 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (19) , 1498-1499
- https://doi.org/10.1063/1.98614
Abstract
Direct writing onto Si has been demonstrated by electron beam induced surface reaction using a XeF2 source. The electron beam stimulated etched depth for Si(100) is proportional to the electron dose. Etch depth by electron beam stimulated etching is 500 nm at 10 kV accelerating voltage, 4×10−3 C/cm2 dose, and 5 mTorr XeF2 gas pressure. An enormously high etching yield of about 100 Si atoms per electron has been observed for electron stimulated etching using the XeF2 source. A 0.5-μm linewidth pattern has been fabricated at a 4×10−3 C/cm2 dose.Keywords
This publication has 5 references indexed in Scilit:
- New selective deposition technology by electron-beam induced surface reactionJournal of Vacuum Science & Technology B, 1986
- Photodeposition of metal films with ultraviolet laser lightJournal of Vacuum Science and Technology, 1982
- Ion- and electron-assisted gas-surface chemistry—An important effect in plasma etchingJournal of Applied Physics, 1979
- The etching of silicon with XeF2 vaporApplied Physics Letters, 1979
- Electron-beam fabrication of 80-Å metal structuresApplied Physics Letters, 1976