The etching of silicon with XeF2 vapor
- 1 January 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (1) , 70-73
- https://doi.org/10.1063/1.90562
Abstract
It is shown that silicon is isotropically etched by exposure to XeF2(gas) at T=300 K. Si etch rates as large as 7000 Å/min were observed for P (XeF2) −2 Torr and the etch rate varies linearly with P (XeF2). There was no observable etching of SiO2, Si3N4, or SiC, demonstrating an extremely large selectivity between silicon and its compounds. Therefore, thin masks constructed from silicon compounds can be used for pattern delineation. The implication of these experimental results for understanding mechanisms associated with plasma etching (including RIE) will be discussed.Keywords
This publication has 9 references indexed in Scilit:
- The role of chemisorption in plasma etchingJournal of Applied Physics, 1978
- Plasma etching A ’’pseudo-black-box’’ approachJournal of Applied Physics, 1977
- Ion-surface interactions in plasma etchingJournal of Applied Physics, 1977
- The Loading Effect in Plasma EtchingJournal of the Electrochemical Society, 1977
- Plasma etching in integrated circuit manufacture—A reviewJournal of Vacuum Science and Technology, 1977
- Plasma reactor design for the selective etching of SiO2 on SiSolid-State Electronics, 1976
- A New Chemical Dry EtchingJapanese Journal of Applied Physics, 1976
- RF Sputter-Etching by Fluoro-Chloro-Hydrocarbon GasesJapanese Journal of Applied Physics, 1974
- Kinetics of Reaction of Elemental Fluorine. III. Fluorination of Silicon and Boron1The Journal of Physical Chemistry, 1964