Plasma reactor design for the selective etching of SiO2 on Si
- 31 December 1976
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (12) , 1039-1040
- https://doi.org/10.1016/0038-1101(76)90186-6
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Control of relative etch rates of SiO2 and Si in plasma etchingSolid-State Electronics, 1975
- 半導体集積回路製造工程へのガスプラズマの応用Denki Kagaku oyobi Kogyo Butsuri Kagaku, 1973
- Etching Characteristics of Silicon and its Compounds by Gas PlasmaJapanese Journal of Applied Physics, 1973
- The effect of electro-negative gases on the work function of a metalSurface Science, 1964