Control of relative etch rates of SiO2 and Si in plasma etching
- 1 December 1975
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (12) , 1146-1147
- https://doi.org/10.1016/0038-1101(75)90184-7
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Etching Characteristics of Silicon and its Compounds by Gas PlasmaJapanese Journal of Applied Physics, 1973