280 W output power single-ended amplifier using single-die GaN-FET for W-CDMA cellular base stations

1 September 2005

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 41 (18) , 1004-1005
https://doi.org/10.1049/el:20052513

Abstract

A single-ended amplifier using a single-die GaN-FET was successfully developed for W-CDMA cellular base-station systems. The developed amplifier delivers a peak saturated output power of 280 W with a linear gain of 12.6 dB at a drain voltage of 48 V under 2.15 GHz 3GPP W-CDMA signal input. It is believed that the 280 W output power is the record output power in sigle-ended amplifiers at 2 GHz band. A high drain efficiency of 29% is also obtained at 8 dB power back off from the saturated output power.

Keywords

SINGLE-ENDED AMPLIFIER
GAN
FIELD EFFECT TRANSISTOR CIRCUITS
SINGLE-DIE GAN-FET
UHF POWER AMPLIFIERS
3G MOBILE COMMUNICATION
48 V
CELLULAR RADIO
12.6 DB
III-V SEMICONDUCTORS
2 GHZ
280 W
CODE DIVISION MULTIPLE ACCESS
W-CDMA CELLULAR BASE STATION SYSTEMS

This publication has 1 reference indexed in Scilit:

AlGaN/GaN HEMTs-an overview of device operation and applications
Proceedings of the IEEE, 2002