Epitaxial Growth of Ba2YCu3Ox Thin Film on Epitaxial ZrO2/Si(100)
- 1 June 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (6A) , L1068
- https://doi.org/10.1143/jjap.27.l1068
Abstract
High-T c superconducting Ba2YCu3O x films have been epitaxially grown on tetragonal ZrO2/Si(100) substrate by rf magnetron sputtering below 700°C. The slowly-cooled sample after deposition in a chamber involving O2 gas exhibits the superconducting transition above liquid nitrogen temperature. T c(onset) and T c(end) observed are 88 K and 82 K, respectively.Keywords
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