High efficiency and low threshold current strained V-groove quantum-wire lasers
- 27 June 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (26) , 3536-3538
- https://doi.org/10.1063/1.111264
Abstract
Multi-quantum-wire strained lasers are reported in the Ga1−xInxAs/Ga1−xAlxAs semiconductor material system with a minimum threshold current of 188 μA and maximum powers of ≊50 μW in continuous multimode operation at wavelengths of ≊980 nm and differential output of ≊0.5 μW/μA. The structures, fabricated by molecular-beam epitaxy, are self-aligned, self-isolated, and minimize electrical and optical losses. Internal quantum efficiencies are ≊83% and internal losses are ≊4.2 cm−1. Characteristic temperatures of ≊260 K, and an increase in threshold current and lasing wavelength under externally applied stress changing from compressive to tensile conditions, show that the major determinants of lasing threshold are density of states and optical losses.Keywords
This publication has 9 references indexed in Scilit:
- Carrier capture and quantum confinement in GaAs/AlGaAs quantum wire lasers grown on V-grooved substratesApplied Physics Letters, 1992
- Effects of compressive and tensile uniaxial stress on the operation of AlGaAs/GaAs quantum-well lasersApplied Physics Letters, 1992
- Vertically stacked multiple-quantum-wire semiconductor diode lasersApplied Physics Letters, 1991
- Quantum wire lasers by OMCVD growth on nonplanar substratesJournal of Crystal Growth, 1991
- Electron states in a GaAs quantum dot in a magnetic fieldPhysical Review B, 1990
- Patterned quantum well semiconductor laser arraysApplied Physics Letters, 1989
- Electron states in narrow gate-induced channels in SiApplied Physics Letters, 1986
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982
- GaAs integrated circuits by selected-area molecular beam epitaxyApplied Physics Letters, 1980