GaAs integrated circuits by selected-area molecular beam epitaxy
- 1 October 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (7) , 628-630
- https://doi.org/10.1063/1.92000
Abstract
Working GaAs integratted logic elements have been fabricated using selected‐area molecular beam epitaxy. Thermally grown native oxides ∼250 Å thick have been used to define regions of single‐crystalline device‐quality GaAs in a matrix of semi‐insulating polycrystalline GaAs. The planarity of this process and the inherent resistivity of the polycrystalline GaAs ( ρ≳105 Ω cm) have been used in the fabrication of working NAND and NOR logic gates (Schottky diode/field‐effect transistor logic).Keywords
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