Ultraviolet-photoemission-spectroscopy study of the interaction of atomic hydrogen with cleaved InP: A valence-band contribution
- 15 June 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (18) , 14581-14588
- https://doi.org/10.1103/physrevb.43.14581
Abstract
Angular-resolved ultraviolet-photoemission spectroscopy has been used to follow the evolution of the valence-band spectrum of InP(110), cleaved in ultrahigh vacuum, at particular stages of its interaction with atomic hydrogen. Photons in 17–65-eV energy range were used, and electrons at normal emission were energy analyzed. During the first interaction stage, H bonds covalently to the substrate. It induces a removal of the P-associated surface states near the top of both parts of the valence band, and the growth of two additional structures around 4.5 and 6 eV below the valence-band edge. These evolutions arise from the bonding of H to P and very likely to In. The analysis indicates that the first interaction stage may be more complex than a mere adsorption. The decomposition stage at heavy hydrogenation is confirmed by a clear metallic Fermi edge from In and an evolution of the spectra compatible with the presence of an overlayer of P-hydrogenated species.Keywords
This publication has 29 references indexed in Scilit:
- Hydrogen-induced contamination of III-V compound surfacesJournal of Applied Physics, 1988
- Interaction of atomic hydrogen with cleaved InP. II. The decomposition stageJournal of Vacuum Science & Technology A, 1988
- Interaction of atomic hydrogen with cleaved InP. I. The adsorption stageJournal of Vacuum Science & Technology A, 1988
- Bulk and surface electronic bands of InP(110) determined by angle-resolved photoemissionPhysical Review B, 1987
- Sb overlayers on (110) surfaces of III-V semiconductors: Total-energy minimization and surface electronic structurePhysical Review B, 1985
- The electronic structure of cleaved indium phosphide (110) surfaces: experiment and theoryJournal of Physics C: Solid State Physics, 1983
- Observation of Ge-induced electronic states at the Ge:GaAs(110) interface by means of polarization-dependent UPSJournal of Vacuum Science and Technology, 1982
- Self-consistent pseudopotential calculation of the electronic properties of the InP (110) surfaceJournal of Physics C: Solid State Physics, 1982
- Photoemission in Solids IIPublished by Springer Nature ,1979
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976