High performance fully passivated InAlAs/InGaAs/InP HFET
- 26 March 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (7) , 647-649
- https://doi.org/10.1049/el:19920409
Abstract
The fabrication of fully Si3N4passivated lattice matched InAlAs/InGaAs/InP HFETs is reported. The DC IV characteristics of 0.25μm gate length multigate finger devices show no kink or loop effects indicating excellent material quality. The drain to source breakdown voltage is in excess of VDB > 5V. From the DC device characterisation a maximum saturation current of 490 mAmm and a maximum transconductance of 500mSmm have been measured. A maximum current gain cutoff frequency of fT = 100 GHZ and a maximum unilateral gain cutoff frequency as high as fmax = 280 GHz have been achieved.Keywords
This publication has 2 references indexed in Scilit:
- Vertical scaling of ultra-high-speed AlInAs-GaInAs HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- DC and RF performance of 0.1 mu m gate length Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.38/In/sub 0.62/As pseudomorphic HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003