High-speed and low-power operation of a resonant tunneling logic gate MOBILE
- 1 March 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 19 (3) , 80-82
- https://doi.org/10.1109/55.661171
Abstract
High-speed operations up to 35 Gb/s were demonstrated for a resonant tunneling (RT) logic gate monostable-bistable transition logic element (MOBILE). The test circuit consisted of a MOBILE and a DCFL-type output buffer, and it was fabricated using InP-based resonant tunneling diode/HEMT integration technology. This operation bit rate is close to the cutoff frequency of the 0.7-/spl mu/m gate HEMTs used in the circuit, and was obtained after improvement of the output buffer design. This result indicates the high-speed potential of the MOBILE, though the speed is still limited by the buffer. The power dissipation of the MOBILE was also discussed based on a simple equivalent circuit model of RTDs. This revealed that the power dissipation is as small as 2 mW/gate over a wide range of operation bit rates.Keywords
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