Compact multiple-valued multiplexers using negative differential resistance devices
- 1 January 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 31 (8) , 1151-1156
- https://doi.org/10.1109/4.508262
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- InGaAs/AlAs/InGaAsP resonant tunneling bipolar transistors grown by chemical beam epitaxyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Differential multiple-valued logic using resonant tunneling diodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- InGaAs/AlAs/InGaAsP resonant tunneling hot electron transistors grown by chemical beam epitaxyIEEE Transactions on Electron Devices, 1994
- Multivalued SRAM cell using resonant tunneling diodesIEEE Journal of Solid-State Circuits, 1992
- Double-barrier resonant tunnelling diode three-state logicElectronics Letters, 1990
- Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logicIEEE Transactions on Electron Devices, 1989
- Picosecond switching time measurement of a resonant tunneling diodeApplied Physics Letters, 1988
- Two decades of multiple-valued logic - An invited tutorialPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1988
- Resonant tunneling devices with multiple negative differential resistance and demonstration of a three-state memory cell for multiple-valued logic applicationsIEEE Electron Device Letters, 1987
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974