InGaAs/AlAs/InGaAsP resonant tunneling hot electron transistors grown by chemical beam epitaxy
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (2) , 155-161
- https://doi.org/10.1109/16.277385
Abstract
No abstract availableKeywords
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