Room Temperature Hot Electron Transistors with InAs-Notched Resonant-Tunneling-Diode Injector

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Abstract
Room temperature operation is achieved in In(GaAl)As/InGaAs resonant-tunneling hot electron transistors (RHET) grown by molecular beam epitaxy on InP substrates. RHETs with base widths of 10, 40 and 60 nm are fabricated and all exhibit room temperature dc current gain greater than 2, with gain as high as 12 observed at resonance in the 40 nm base device. To our knowledge these are the first In(GaAl)As hot electron transistors to exhibit 300 K gain of this magnitude. In addition, the transistors also exhibit strong negative transconductance and a unique negative peak-to-valley current ratio. S-parameter measurements of the 40(60) nm base RHET give values for f T and f MAX of 67(54) and 41(11) GHz respectively.