Nonreciprocal TE-TM mode converter with semiconductor guiding layer
- 5 December 2002
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 38 (25) , 1670-1672
- https://doi.org/10.1049/el:20021035
Abstract
A nonreciprocal TE-TM mode converter with a semiconductor guiding layer was studied. The mode converter comprised a magnetic garnet/GaInAsP/InP (AlInAs-oxide, air) waveguide. When the lower cladding layer was air, the propagation distance required for a 45° mode conversion was estimated to be several hundreds of microns at 1.55 µm.Keywords
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