Selective oxidation for enhancement of magneto-opticeffect in optical isolator with semiconductor guiding layer

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Abstract
Selective oxidation of an AlInAs layer grown on an InP substrate is studied with a view to enhancing the magneto-optic effect in an optical isolator with a semiconductor guiding layer. The isolator operates with a nonreciprocal phase shift in a magneto-optic waveguide. The waveguide with an AlInAs oxide cladding layer miniaturises the nonreciprocal phase shifter to several hundreds of microns.