Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substrates
- 6 May 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (18) , 1961-1963
- https://doi.org/10.1063/1.105032
Abstract
No abstract availableKeywords
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