Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration

19 February 1990

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 56 (8) , 737-739
https://doi.org/10.1063/1.102697

Abstract

Centimeter-size single-crystal InP or GaAs wafers have been fused together entirely, face to face or side by side, after a heat treatment in a graphite/quartz reactor which can press the wafers together through differential thermal expansion. Diodes formed by fusing p- and n-type wafers showed normal current-voltage characteristics and light emission. Fusion between lattice-mismatched wafers (i.e., InP and GaAs) has also been demonstrated.

Keywords

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