Fabrication, characterization, and analysis of mass-transported GaInAsP/InP buried-heterostructure lasers
- 1 August 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 20 (8) , 855-865
- https://doi.org/10.1109/jqe.1984.1072484
Abstract
No abstract availableThis publication has 35 references indexed in Scilit:
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